|
|
PDF BC858BW Data sheet ( Hoja de datos )
| Número de pieza | BC858BW | |
| Descripción | PNP General Purpose Transistor | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BC858BW (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
Transistors
BC858BW / BC858B
PNP General Purpose Transistor
BC858BW / BC858B
zFeatures
1) BVCEO < -30V (IC=-1mA)
2) Complements the BC848B / BC848BW.
zPackage, marking and packaging specifications
Paet No.
Pakaging type
Marking
Code
Basic ordering unit (pieces)
BC858BW
UMT3
G3K
T106
3000
BC858B
SST3
G3K
T116
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ When mounted on 7 × 5 × 0.6 mm ceramic board.
Limits
−30
−30
−5
−0.1
0.2
0.35
150
−65 to +150
Unit
V
V
V
A
W∗
˚C
˚C
zExternal dimensions (Unit : mm)
BC858BW
SOT-323
ROHM : UMT3
EIAJ : EC-70
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
00.1
(3)
0.3+- 00.1
0.15±0.05
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
BC858B
SOT-23
ROHM : SST3
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
−0.1
0.45±0.1
(1) (2)
(3)
0~0.1
0.2Min.
0.4+−00..015
0.15−+00..016
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
BVCBO
BVCEO
BVEBO
Collector cutoff current
ICBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
VCE(sat)
VBE(on)
hFE
fT
Cob
Min.
−30
−30
−5
−
−
−
−
−0.6
210
−
−
Typ.
−
−
−
−
−
−
−
−
−
250
4.5
Max.
−
−
−
−100
4
−0.3
−0.65
−0.75
480
−
−
Unit
V
V
V
nA
µA
V
V
V
−
MHz
pF
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −30V
VCB= −30V, Ta=150°C
IC/IB= −10mA/−0.5mA
IC/IB= −100mA/−5mA
VCE/IC= −5V/−10mA
VCE/IC= −5V/−2mA
VCE= −5V , IE=20mA , f=100MHz
VCB= −10V , IE=0 , f=1MHz
zElectrical characteristics curves
100 0.7
Ta=25˚C
0.6
0.5
80
0.4
60
0.3
40
0.2
20
0.1
0 IB=0mA
0 1.0 2.0
COLLECTOR-EMITTER VOLTAGE : VCE(V)
Fig.1 Grounded emitter output
characteristics ( I )
10.0
Ta=25˚C
50
8.0 45
40
35
6.0
30
25
4.0
20
15
2.0 10
5
0 1B=0µA
0 1.0 2.0
COLLECTOR-EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output
characteristics ( II )
Rev.A
1/4
1 page  
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BC858BW.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BC858B | PNP Transistor |  Multicomp |
| BC858B | PNP Silicon AF Transistor |  Infineon |
| BC858B | PNP Silicon Epitaxial Transistors |  Kingtronics |
| BC858B | PNP General Purpose Transistor | ROHM Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |