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Infineon Technologies AG - PNP Silicon AF Transistor

Numéro de référence BC857BT
Description PNP Silicon AF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BC857BT fiche technique
PNP Silicon AF Transistor
 For AF input stages and driver applications
 High current gain
 Low collector-emitter saturation voltage
Complementary types: BC847...T
BC857T
3
2
1 VPS05996
Type
BC857AT
BC857BT
Marking
3Es
3Fs
1=B
1=B
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation, TS = 109 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Pin Configuration
2=E
3=C
2=E
3=C
Package
SC75
SC75
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
Ptot
Tj
Tstg
Value
45
50
50
5
100
200
250
150
-65 ... 150
Unit
V
mA
mW
°C
RthJS
165
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Nov-29-2001

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