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PDF BC856S Data sheet ( Hoja de datos )
| Número de pieza | BC856S | |
| Descripción | PNP Silicon AF Transistor Array | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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BC856S
PNP Silicon AF Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with good matching in one package
C1 B2 E2
654
4
5
6
3
2
1
VPS05604
TR2
TR1
123
E1 B1 C2
EHA07175
Type
BC856S
Marking
3Ds
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
Ptot
Tj
Tstg
Value
65
80
80
5
100
200
250
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
140
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Nov-29-2001
1 page  
BC856S
Transition frequency fT = f (IC)
VCE = 5V
10 3
MHz
fT 5
EHP00378
Collector-base capacitance CCB = f (VCBO)
Emitter-base capacitance CEB = f (VEBO)
12 BC 856...860
CCB0 pF
(CEB0 )
10
EHP00376
8
C EBO
102 6
54
C CBO
2
10 1
10 -1
5 10 0
5 101
mA 10 2
ΙC
Collector cutoff current ICBO = f (TA)
VCB = 30V
0
10 -1
5 10 0
V 101
VCB0 (VEB0 )
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
10 4
nA
Ι CB0
10 3
5
10 2
5
10 1
5
10 0
5
10 -1
0
max
EHP00381
10 2
mA
ΙC
10 1
5
typ
10 0
5
EHP00380
100 C
25 C
-50 C
10 -1
50 100 C 150
0 0.1 0.2 0.3 0.4 V 0.5
TA VCEsat
5 Nov-29-2001
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BC856S.PDF ] | |
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