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دیتاشیت - ETC - SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS

شماره قطعه BC850B-2FZ
شرح مفصل SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS
تولید کننده ETC 
آرم ETC 


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BC850B-2FZ شرح
SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
BC846
BC848
BC850
BC847
BC849
PARTMARKING DETAILS
BC846A–Z1A BC848B–1K
BC846B–1B BC848C–Z1L
BC847A–Z1E BC849B–2B
BC847B–1F BC849C–2C
BC847C–1GZ BC850B–2FZ
BC848A–1JZ BC850C-Z2G
COMPLEMENTARY TYPES
BC846
BC856
BC847
BC857
BC848
BC858
BC849
BC859
BC850
BC860
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at Tamb=25°C
Operating and Storage
Temperature Range
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
IBM
IEM
Ptot
Tj:Tstg
BC846
80
80
65
BC847
50
50
45
6
BC848 BC849
30 30
30 30
30 30
5
100
200
200
200
330
-55 to +150
BC850
50
50
45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Collector Cut-Off Current ICBO
Max
Max
Collector-Emitter
Saturation Voltage
VCE(sat) Typ
Max.
Typ
Max.
15 nA VCB = 30V
5 µA VCB = 30V
Tamb=150°C
90 mV IC=10mA,
250 mV IB=0.5mA
200 mV IC=100mA,
600 mV IB=5mA
Typ
Max.
300 mV IC=10mA*
600 mV
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
VBE(sat) Typ
Typ
VBE Min
Typ
Max
700 mV IC=10mA,
IB=0.5mA
900 mV IC=100mA,
IB=5mA
580 mV IC=2mA
660 mV VCE=5V
700 mV
Max
770 mV IC=10mA
VCE=5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC= 11mA, VCE = 1V at constant base current.

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