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PDF BC848C Data sheet ( Hoja de datos )
| Número de pieza | BC848C | |
| Descripción | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon AF Transistors
q For AF input stages and driver applications
q High current gain
q Low collector-emitter saturation voltage
q Low noise between 30 Hz and 15 kHz
q Complementary types: BC 856, BC 857,
BC 859, BC 860 (PNP)
BC 846
... BC 850
Type
BC 846 A
BC 846 B
BC 847 A
BC 847 B
BC 847 C
BC 848 A
BC 848 B
BC 848 C
BC 849 B
BC 849 C
BC 850 B
BC 850 C
Marking
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2Cs
2Fs
2Gs
Ordering Code
(tape and reel)
Q62702-C1772
Q62702-C1746
Q62702-C1884
Q62702-C1687
Q62702-C1715
Q62702-C1741
Q62702-C1704
Q62702-C1506
Q62702-C1727
Q62702-C1713
Q62702-C1885
Q62702-C1712
Pin Configuration
123
BEC
Package1)
SOT-23
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
07.94
1 page  
www.DataSheet4U.com
BC 846
... BC 850
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V
Semiconductor Group
5
5 Page 
www.DataSheet4U.com
BC 856
... BC 860
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 856
BC 857, BC 860
BC 858, BC 859
Collector-base breakdown voltage
IC = 10 µA
BC 856
BC 857, BC 860
BC 858, BC 859
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
BC 856
BC 857, BC 860
BC 858, BC 859
Emitter-base breakdown voltage
IE = 1 µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
DC current gain
IC = 10 µA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
IC = 2 mA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
1) Pulse test: t ≤ 300 µs, D = 2 %.
V(BR)CE0
V
65 –
–
45 –
–
30 –
–
V(BR)CB0
80
50
30
–
–
–
–
–
–
V(BR)CES
80
50
30
–
–
–
–
–
–
V(BR)EB0
5
–
–
ICB0
– 1 15 nA
– – 4 µA
hFE –
– 140 –
– 250 –
– 480 –
125 180 250
220 290 475
420 520 800
VCEsat
–
–
mV
75 300
250 650
VBEsat
–
–
700 –
850 –
VBE(on)
600 650 750
– – 820
Semiconductor Group
3
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BC848C.PDF ] | |
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