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PDF BC847S Data sheet ( Hoja de datos )
| Número de pieza | BC847S | |
| Descripción | NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon AF Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two ( galvanic) internal isolated Transistors
with high matching in one package
BC 847S
Type
BC 847S
Marking Ordering Code
1Cs Q62702-C2372
Pin Configuration
1/4=E1/E2 2/5=B1/B2
Package
3/6=C2/C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
Ptot
Tj
Tstg
RthJA
RthJS
Value
45
50
50
6
100
200
250
150
- 65...+150
≤275
≤140
Unit
V
mA
mW
°C
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
1
May-12-1998
1 page  
Transition frequency fT = f (IC)
VCE = 5V
BC 847S
Collector-base capacität CCB = f (VCBO)
Emitter-base capacität CEB = f (VEBO)
Collector cutoff current ICBO = f (TA)
VCB = 30V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
Semiconductor Group
5
May-12-1998
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BC847S.PDF ] | |
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