BC847CT Datasheet PDF - NXP Semiconductors
| Part Number | BC847CT | |
| Description | NPN general purpose transistors | |
| Manufacturers | NXP Semiconductors | |
| Logo |  |
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BC847 series
45 V, 100 mA NPN general-purpose transistors
Rev. 9 — 23 September 2014
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number[1]
Package
Nexperia
BC847
SOT23
BC847A
BC847B
BC847C
BC847W
SOT323
BC847AW
BC847BW
BC847CW
BC847T
SOT416
BC847AT
BC847BT
BC847CT
BC847AM
SOT883
BC847BM
BC847CM
JEITA
-
SC-70
SC-75
SC-101
[1] Valid for all available selection groups.
JEDEC
TO-236AB
-
-
-
PNP complement
BC857
BC857A
BC857B
BC857C
BC857W
BC857AW
BC857BW
BC857CW
BC857T
BC857AT
BC857BT
BC857CT
BC857AM
BC857BM
BC857CM
1.2 Features and benefits
General-purpose transistors
SMD plastic packages
Three different gain selections
AEC-Q101 qualified
1.3 Applications
General-purpose switching and amplification
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Nexperia
BC847 series
45 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A;
Tj = 150 C
VEB = 5 V; IC = 0 A
- - 15 nA
- - 5 A
- - 100 nA
hFE
VCEsat
VBEsat
VBE
fT
DC current gain
VCE = 5 V; IC = 10 A
hFE group A
- 170 -
hFE group B
- 280 -
hFE group C
- 420 -
DC current gain
VCE = 5 V; IC = 2 mA
110 -
800
hFE group A
110 180 220
hFE group B
200 290 450
hFE group C
420 520 800
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
-
[1] -
90 200 mV
200 400 mV
base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
[2] -
[2] -
700 -
900 -
mV
mV
base-emitter voltage IC = 2 mA; VCE = 5 V
[2] 580 660 700 mV
IC = 10 mA; VCE = 5 V
- - 770 mV
transition frequency VCE = 5 V; IC = 10 mA;
f = 100 MHz
100 - - MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
-
1.5 pF
f = 1 MHz
Ce
emitter capacitance VEB = 0.5 V; IC = ic = 0 A;
-
11 -
pF
f = 1 MHz
NF noise figure
IC = 200 A; VCE = 5 V;
RS = 2 k; f = 1 kHz;
B = 200 Hz
- 2 10 dB
[1] Pulse test: tp 300 s; = 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
BC847_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 23 September 2014
© Nexperia B.V. 2017. All rights reserved
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