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PDF BC847BVN Data sheet ( Hoja de datos )
| Número de pieza | BC847BVN | |
| Descripción | NPN/PNP general purpose transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BC847BVN
NPN/PNP general purpose
transistor
Product specification
Supersedes data of 2001 Aug 30
2001 Nov 07
1 page  
Philips Semiconductors
NPN/PNP general purpose transistor
Product specification
BC847BVN
1000
handbook, halfpage
hFE
800
MLD699
600
(1)
400
(2)
200 (3)
−010−2
−10−1
−1
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.6 DC current gain as a function of collector
current: typical values.
−1200
handbook, halfpage
VBE
mV
−1000
−800
−600
−400
(1)
(2)
(3)
MLD700
−20−010−2 −10−1
−1
TR2 (PNP); VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−10
−102
−103
IC (mA)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
−104
handbook, halfpage
VCEsat
(mV)
−103
MLD701
−102
(1)
(2)
(3)
−1−010−1
−1
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.8 Collector-emitter saturation voltage as a
function of collector current: typical values.
handb−o1o2k,0h0alfpage
VBEsat
(mV)
−1000
−800
−600
MLD702
(1)
(2)
(3)
−400
−20−010−1
−1
TR2 (PNP); IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−10
−102
−103
IC (mA)
Fig.9 Base-emitter saturation voltage as a
function of collector current.
2001 Nov 07
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BC847BVN.PDF ] | |
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