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PDF BC559B Data sheet ( Hoja de datos )
| Número de pieza | BC559B | |
| Descripción | Low Noise Transistors | |
| Fabricantes | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC559/D
Low Noise Transistors
PNP Silicon
COLLECTOR
1
BC559, B, C
BC560C
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC559 BC560 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–30 –45
–30 –50
–5.0
–100
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
BC559
BC560
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –10 µAdc, IE = 0)
BC559
BC560
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = +125°C)
Emitter Cutoff Current
(VEB = –4.0 Vdc, IC = 0)
V(BR)EBO
ICBO
IEBO
Min
–30
–45
–30
–50
–5.0
—
—
—
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
Vdc
——
——
Vdc
——
——
— — Vdc
— –15 nAdc
— –5.0 µAdc
— –15 nAdc
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BC559B.PDF ] | |
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