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Motorola Inc - Amplifier Transistors

Numéro de référence BC556
Description Amplifier Transistors
Fabricant Motorola Inc 
Logo Motorola  Inc 





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BC556 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC556/D
Amplifier Transistors
PNP Silicon
COLLECTOR
1
BC556,B
BC557A,B,C
BC558B
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 556 557 558 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–65 –45 –30 Vdc
–80 –50 –30 Vdc
–5.0 Vdc
–100
mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC556
BC557
BC558
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –100 µAdc)
BC556
BC557
BC558
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
BC556
BC557
BC558
V(BR)EBO
Collector–Emitter Leakage Current
(VCES = –40 V)
(VCES = –20 V)
(VCES = –20 V, TA = 125°C)
BC556
BC557
BC558
BC556
BC557
BC558
ICES
Min
–65
–45
–30
–80
–50
–30
–5.0
–5.0
–5.0
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
——
——
——
——
——
——
——
——
——
–2.0 –100
–2.0 –100
–2.0 –100
— –4.0
— –4.0
— –4.0
V
V
V
nA
µA
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

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