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BC369 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Motorola Inc - Amplifier Transistors

شماره قطعه BC369
شرح مفصل Amplifier Transistors
تولید کننده Motorola Inc 
آرم Motorola  Inc 


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BC369 شرح
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BC368/D
Amplifier Transistors
COLLECTOR
2
COLLECTOR
2
3
BASE
NPN
1
EMITTER
3
BASE
PNP
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
PD
20 Vdc
25 Vdc
5.0 Vdc
1.0 Adc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
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Thermal Resistance, Junction to Ambient
Rq JA
200 °C/W
Thermal Resistance, Junction to Case
Rq JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 µA, IE = 0 )
Emitter – Base Breakdown Voltage
(IE = 100 µA, IC = 0)
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150°C)
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
BC368, 369
BC368–25
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz)
Collector–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
Base–Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V)
hFE
fT
VCE(sat)
VBE(on)
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1999
Transistors,
FETs
and
Diodes
Device
Data
NPN
BC368, -25
PNP
BC369
Voltage and current are negative
for PNP transistors
1
2
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
Min Typ Max Unit
20 — — Vdc
25 — — Vdc
5.0 — — Vdc
— — 10 µAdc
— — 1.0 mAdc
— — 10 µAdc
50 — —
85 — 375
170 — 375
60 — —
65 — — MHz
— 0.5
V
— 1.0
V
1

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