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BC369 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Siemens Semiconductor Group - PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)

شماره قطعه BC369
شرح مفصل PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
تولید کننده Siemens Semiconductor Group 
آرم Siemens Semiconductor Group 


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BC369 شرح
PNP Silicon AF Transistor
q High current gain
q High collector current
q Low collector-emitter saturation voltage
q Complementary type: BC 368 (NPN)
BC 369
2
3
1
Type
BC 369
Marking
Ordering Code
C62702-C748
Pin Configuration
123
ECB
Package1)
TO-92
Maximum Ratings
Parameter
www.DataSheet4U.com
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 90 ˚C2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - case3)
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
Unit
20 V
25
5
1A
2
100 mA
200
0.8 (1)
W
150 ˚C
– 65 … + 150
Rth JA
Rth JC
156
75
K/W
1) For detailed information see chapter Package Outlines.
2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91

قانون اساسیصفحه 4
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