DataSheetWiki


BC337 fiches techniques PDF

Diotec Semiconductor - Si-Epitaxial PlanarTransistors

Numéro de référence BC337
Description Si-Epitaxial PlanarTransistors
Fabricant Diotec Semiconductor 
Logo Diotec Semiconductor 





1 Page

No Preview Available !





BC337 fiche technique
BC337 / BC338
BC337 / BC338
NPN
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2006-05-30
Power dissipation
Verlustleistung
CBE
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E-B short
B open
C open
VCES
VCEO
VEBO
Ptot
IC
ICM
IB
Tj
TS
Grenzwerte (TA = 25°C)
BC337
BC338
50 V
30 V
45 V
25 V
5V
625 mW 1)
800 mA
1A
100 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 1 V, IC = 100 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
VCE = 1 V, IC = 300 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA
VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
100 160 250
160 250 400
250 400 630
60 130
100 200
170 320
– – 0.7 V
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1

PagesPages 2
Télécharger [ BC337 ]


Fiche technique recommandé

No Description détaillée Fabricant
BC3311IR-141-N Leaded Power Chokes Chilisin Electronics
Chilisin Electronics
BC337 Amplifier Transistor Motorola  Inc
Motorola Inc
BC337 45V, 800mA, NPN Amplifier Transistor ON Semiconductor
ON Semiconductor
BC337 500mA, 45V, NPN General-purpose Transistor NXP Semiconductors
NXP Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche