|
|
Numéro de référence | BC337 | ||
Description | Si-Epitaxial PlanarTransistors | ||
Fabricant | Diotec Semiconductor | ||
Logo | |||
1 Page
BC337 / BC338
BC337 / BC338
NPN
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2006-05-30
Power dissipation
Verlustleistung
CBE
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E-B short
B open
C open
VCES
VCEO
VEBO
Ptot
IC
ICM
IB
Tj
TS
Grenzwerte (TA = 25°C)
BC337
BC338
50 V
30 V
45 V
25 V
5V
625 mW 1)
800 mA
1A
100 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 1 V, IC = 100 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
VCE = 1 V, IC = 300 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA
VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
100 160 250
160 250 400
250 400 630
60 130
100 200
170 320
–
–
–
– – 0.7 V
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
|
|||
Pages | Pages 2 | ||
Télécharger | [ BC337 ] |
No | Description détaillée | Fabricant |
BC3311IR-141-N | Leaded Power Chokes | Chilisin Electronics |
BC337 | Amplifier Transistor | Motorola Inc |
BC337 | 45V, 800mA, NPN Amplifier Transistor | ON Semiconductor |
BC337 | 500mA, 45V, NPN General-purpose Transistor | NXP Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |