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BC327-16 fiches techniques PDF

NXP Semiconductors - PNP general purpose transistor

Numéro de référence BC327-16
Description PNP general purpose transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BC327-16 fiche technique
BC 327 / BC 328
PNP
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
PNP
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Emitter-voltage
B shorted
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Base current – Basisstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCES
- VEB0
Ptot
- IC
- ICM
- IB
Tj
TS
Grenzwerte (TA = 25/C)
BC 327
BC 328
45 V
25 V
50 V
30 V
5V
625 mW 1)
800 mA
1A
100 mA
150/C
- 65…+ 150/C
Characteristics, Tj = 25/C
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 100 mA
- VCE = 1 V, - IC = 300 mA
Group -16
Group -25
Group -40
Group -16
Group -25
Group -40
hFE
hFE
hFE
hFE
hFE
hFE
Min.
Kennwerte, Tj = 25/C
Typ.
Max.
100 160 250
160 250 400
250 400 630
60 130
100 200
170 320
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2 01.11.2003

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