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PDF BD241C Data sheet ( Hoja de datos )
| Número de pieza | BD241C | |
| Descripción | Complementary Silicon Plastic Power Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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1. BD241C  Hay una vista previa y un enlace de descarga de BD241C (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
• High Current Gain − Bandwidth Product
• Compact TO−220 AB Package
• Epoxy Meets UL94 V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current −Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25°C
Derate above 25°C
Symbol
VCEO
VCES
VEB
IC
ICM
IB
PD
BD241C
BD242B BD242C
80 100
90 115
5.0
3.0
5.0
1.0
40
0.32
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction Temperature Range
TJ, Tstg
– 65 to + 150
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎESD − Human Body Model
HBM
3B
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎESD − Machine Model
MM
C
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
RqJA
RqJC
62.5
3.125
°C/W
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 10
1
www.onsemi.com
POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80−100 VOLTS
40 WATTS
COMPLEMENTARY
COLLECTOR 2,4
COLLECTOR 2,4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
MARKING
DIAGRAM
1
2
3
TO−220
CASE 221A
STYLE 1
AYWW
BD24xxG
BD24xx = Device Code
xx = 1C, 2B, or 2C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
BD241CG
BD242BG
TO−220
(Pb−Free)
TO−220
(Pb−Free)
50 Units/Rail
50 Units/Rail
BD242CG
TO−220
(Pb−Free)
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
BD241C/D
1 page  
BD241C (NPN), BD242B (PNP), BD242C (PNP)
103
102 VCE = 30 V
101 TJ = 150°C
100 100°C
10-1
REVERSE
FORWARD
10- 2 25°C
10- 3
- 0.4 - 0.3 - 0.2 - 0.1
ICES
0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
107
IC = 10 x ICES
VCE = 30 V
106
105
IC ≈ ICES
104
IC = 2 x ICES
103 (TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
102
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base−Emitter Resistance
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BD241C.PDF ] | |
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