|
|
Numéro de référence | BD202 | ||
Description | Silicon Complementary Transistors General Purpose Amplifier/ Switch | ||
Fabricant | NTE Electronics | ||
Logo | |||
1 Page
NTE182 (NPN) & NTE183 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use
in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 10A
D High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39°C/W
Electrical Characteristics: (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 200mA, IB = 0, Note 1
ICEO VCE = 30V, IB = 0
ICEX VCE = 70V, VBE(off) = 1.5V
VCE = 70V, VBE(off) = 1.5V,
TC = +150°C
ICBO VCB = 70V, IE = 0
VCB = 70V, IE = 0, TC = +150°C
IEBO VBE = 5V, IC = 0
60
–
–
–
–
–
–
––V
– 700 µA
– 1.0 mA
– 5.0 mA
– 1.0 mA
– 10 mA
– 5.0 mA
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
|
|||
Pages | Pages 2 | ||
Télécharger | [ BD202 ] |
No | Description détaillée | Fabricant |
BD20-601A | Diode ( Rectifier ) | American Microsemiconductor |
BD201 | Medium Power Switching and Amplifier Applications | ETC |
BD201 | EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS | General Semiconductor |
BD201 | (BD201 / BD203) Silicon NPN Power Transistor | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |