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Fairchild Semiconductor - PNP EPITAXIAL SILICON TRANSISTOR

Numéro de référence BCX71K
Description PNP EPITAXIAL SILICON TRANSISTOR
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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BCX71K fiche technique
March 2014
BCX71K
PNP General-Purpose Amplifier
Description
This device is designed for applications requiring
extremely high-current gain at collector currents to
300 mA. Sourced from process 68.
C
E
SOT-23
Mark: BK
B
Ordering Information
Part Number
BCX71K
Marking
BK
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCES
VEBO
IC
TJ , TSTG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Junction and Storage Temperature Range
-45
-45
-5
-500
-55 to +150
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
BCX71K Rev. 1.1.0
1
www.fairchildsemi.com

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