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Motorola Inc - General Purpose Transistors

Numéro de référence BCX70GLT1
Description General Purpose Transistors
Fabricant Motorola Inc 
Logo Motorola  Inc 





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BCX70GLT1 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BCX70GLT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
BCX70GLT1
BCX70JLT1
BCX70KLT1
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK
Value
45
45
5.0
200
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mAdc, IE= 0)
Emitter – Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICES
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
45 — Vdc
5.0 — Vdc
— 20 nAdc
— 20 mAdc
— 20 nAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

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