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Siemens Semiconductor Group - NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)

Numéro de référence BCX58
Description NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BCX58 fiche technique
NPN Silicon AF Transistors
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BCX 78, BCX 79 (PNP)
BCX 58
BCX 59
2
3
1
Type
BCX 58 VIII
BCX 58 IX
BCX 58 X
BCX 59 VIII
BCX 59 IX
BCX 59 X
Marking
Ordering Code
Q62702-C619
Q62702-C620
Q62702-C621
Q62702-C623
Q62702-C624
Q62702-C625
Pin Configuration
123
CB E
Package1)
TO-92
Maximum Ratings
Parameter
Symbol
BCX 58
Collector-emitter voltage
VCE0
32
Collector-base voltage
VCB0
32
Emitter-base voltage
VEB0
Collector current
IC
Peak collector current
ICM
Peak base current
IBM
Total power dissipation, TC = 70 ˚C Ptot
Junction temperature
Tj
Storage temperature range
Tstg
Values
BCX 59
45
45
7
100
200
200
500
150
– 65 … + 150
Thermal Resistance
Junction - ambient
Rth JA
Junction - case2)
Rth JC
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
250
160
Unit
V
mA
mW
˚C
K/W
Semiconductor Group
1
5.91

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