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Numéro de référence | BCX5616 | ||
Description | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | ||
Fabricant | Zetex Semiconductors | ||
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1 Page
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2001
BCX5616
C
COMPLEMENTARY TYPE – BCX5316
PARTMARKING DETAIL – BL
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
100 V
Collector-Emitter Voltage
VCEO
80 V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM 2 A
Continuous Collector Current
IC
1A
Power Dissipation at Tamb=25°C
Ptot
1W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage
V(BR)CBO 100
V IC =100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V IC =10mA
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V IE =10µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
0.1 µA VCB =30V
20 µA VCB =30V, Tamb =150°C
20 nA VEB =4V
0.5 V
IC =500mA, IB =50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
1.0 V
IC =500mA, VCE =2V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE
fT
25
100
25
150
IC =5mA, VCE =2V*
250 IC =150mA, VCE =2V*
IC =500mA, VCE =2V*
MHz IC =50mA, VCE =10V,
f=100MHz
Output Capacitance
Cobo
*Measured under pulsed conditions.
15 pF VCB =10V, f=1MHz
TBA
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Pages | Pages 1 | ||
Télécharger | [ BCX5616 ] |
No | Description détaillée | Fabricant |
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