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Numéro de référence | BCX38C | ||
Description | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS | ||
Fabricant | Zetex Semiconductors | ||
Logo | |||
1 Page
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
* Ptot=1 Watt
BCX38A/B/C
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
80
60
10
2
800
1
-55 to +200
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80
V IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60
V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 10
V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
100 nA
VCB=60V, IE=0
Emitter Cut-Off
Current
IEBO
100 nA
VEB=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
1.25 V
IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1.8 V
IC=800mA, VCE=5V*
Static
Forward
Current
Transfer
Ratio
BCX38A hFE
BCX38B
BCX38C
500
1000
2000
4000
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
3-20
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Pages | Pages 3 | ||
Télécharger | [ BCX38C ] |
No | Description détaillée | Fabricant |
BCX38 | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS | Zetex Semiconductors |
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