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PDF BCX17R Data sheet ( Hoja de datos )
| Número de pieza | BCX17R | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS –
BCX17
BCX17R
– T1
– T4
COMPLIMENTARY TYPES - BCX19
BCX17
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
Collector-Emitter Voltage (IC =-10mA)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Base Current
VCES
VCEO
VEBO
IC
ICM
IEM
IB
-50
-45
-5
-500
-1000
-1000
-100
V
V
V
mA
mA
mA
mA
Peak Base Current
IBM
-200
mA
Power Dissipation at Tamb=25°C
Ptot 330 mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
Emitter-Base Cut-Off
Current
ICBO
IEBO
-100
-200
-10
nA
µA
µA
IE =0, VCB =-20V
IE =0, VCB =-20V, Tj=150°C
IC =0, VEB =-1V
Base-Emitter Voltage
Collector-Emitter
Saturation Voltage
VBE
VCE(sat)
-1.2 V
-620 mV
IC =-500mA, VCE =-1V*
IC =-500mA, IB =-50mA*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
100 600 IC =-100mA, VCE =-1V
70 IC =-300mA, VCE =-1V*
40 IC =-500mA, VCE =-1V*
100 MHz IC =-10mA, VCE =-5V
f =35MHz
Output Capacitance
Cobo
8.0
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
pF
VCB =-10V, f =1MHz
TBA
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BCX17R.PDF ] | |
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