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PDF BCW72LT1 Data sheet ( Hoja de datos )
| Número de pieza | BCW72LT1 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW72LT1/D
General Purpose Transistor
NPN Silicon
COLLECTOR
3
BCW72LT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BCW72LT1 = K2
Symbol
VCEO
VCBO
VEBO
IC
Value
45
50
5.0
100
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mAdc, VEB = 0)
Collector – Emitter Breakdown Voltage
(IC = 2.0 mAdc, VEB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 100°C)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min Typ Max Unit
45 — — Vdc
45 — — Vdc
50 — — Vdc
5.0 — — Vdc
— — 100 nAdc
— — 10 mAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
TYPICAL DYNAMIC CHARACTERISTICS
BCW72LT1
300
200
100
70
50
30
20
10
7.0
5.0
3.0
1.0
tr
td @ VBE(off) = 0.5 Vdc
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 13. Turn–On Time
50 70 100
1000
700
500 ts
300
200
100 tf
70
50
30 VCC = 3.0 V
20
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
1.0 2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 14. Turn–Off Time
50 70 100
500
TJ = 25°C
f = 100 MHz
300
200
VCE = 20 V
5.0 V
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
Figure 15. Current–Gain — Bandwidth Product
10
TJ = 25°C
7.0 f = 1.0 MHz
Cib
5.0
Cob
3.0
2.0
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. Capacitance
20
50
20
VCE = 10 Vdc
10
7.0
hfe ≈ 200 @ IC = 1.0 mA
f = 1.0 kHz
TA = 25°C
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 17. Input Impedance
50 100
200
VCE = 10 Vdc
100 f = 1.0 kHz
70 TA = 25°C
50 hfe ≈ 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
50 100
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BCW72LT1.PDF ] | |
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