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Infineon Technologies AG - PNP Silicon AF Transistors

Numéro de référence BCW68G
Description PNP Silicon AF Transistors
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BCW68G fiche technique
PNP Silicon AF Transistors
 For general AF applications
 High current gain
 Low collector-emitter saturation voltage
Complementary types: BCW65, BCW66 (NPN)
BCW67, BCW68
3
2
1 VPS05161
Type
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
Marking
DAs
DBs
DCs
DFs
DGs
DHs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BCW67
BCW68
32 45
45 60
55
800
1
100
200
330
150
-65 ... 150
Junction - soldering point1)
RthJS
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Jul-10-2001

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