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PDF BCW68G Data sheet ( Hoja de datos )

Número de pieza BCW68G
Descripción PNP General Purpose Amplifier
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! BCW68G Hoja de datos, Descripción, Manual

March 2014
BCW68G
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
and switching applications at currents to 500 mA.
Sourced from process 63.
C
E
SOT-23
Mark: DG
B
Ordering Information
Part Number
BCW68G
Marking
DG
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ , TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Junction and Storage Temperature Range
-45
-60
-5
-800
-55 to +150
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
BCW68G Rev. 1.1.0
1
www.fairchildsemi.com

1 page




BCW68G pdf
Typical Performance Characteristics (Continued, f = 1.0 kHz)
5
hoe
2 h re
h fe
1
0.5 h ie
0.2
0.1_1
VCE = -10 V
T A = 25oC
_ 2 _ 5 _ 10 _ 20
I C - COLLECTOR CURRENT (mA)
_ 50
Figure 11. Common Emitter Characteristics
1.3
1.2 h re and hoe
1.1
h re
h ie
h fe
hoe
1
h ie
0.9
h fe
I C= -10mA
TA = 25oC
0.8
-4
-8 -12 -16
V CE- COLLECTOR VOLTAGE (V)
-20
Figure 12. Common Emitter Characteristics
1.5
I C= -10mA
1.4 VCE = -10 V
1.3
1.2
h fe
h ie
h re
hoe
1.1 hoe
1
0.9 h re
0.8 h ie
0.7
0.6 h fe
0.5
-40 -20
0
20 40 60 80
T A - AMBIENT TEMPERATURE ( oC)
100
Figure 13. Common Emitter Characteristics
© 1997 Fairchild Semiconductor Corporation
BCW68G Rev. 1.1.0
5
www.fairchildsemi.com

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