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Infineon Technologies AG - NPN Silicon AF Transistor

Numéro de référence BCW66
Description NPN Silicon AF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BCW66 fiche technique
NPN Silicon AF Transistor
 For general AF applications
 High current gain
 Low collector-emitter saturation voltage
 Complementary types: BCW67, BCW68 (PNP)
BCW65, BCW66
3
2
1 VPS05161
Type
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
Marking
EAs
EBs
ECs
EFs
EGs
EHs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
BCW65
BCW66
32 45
60 75
55
800
1
100
200
330
150
-65 ... 150
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Jul-10-2001

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