PDF BCW61A Data sheet ( Hoja de datos )

Número de pieza	BCW61A
Descripción	PNP EPITAXIAL SILICON TRANSISTOR
Fabricantes	Fairchild Semiconductor
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No Preview Available ! BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature VCBO VCEO VEBO IC PC TSTG -32 -32 -5.0 -100 350 -55 ~ 150 • Refer to KS5086 for graphs Unit V V V mA mW °C SOT-23 ELECTRICAL CHARACTERISTICS (TA=25°C) 1. Base 2. Emitter 3. Collector Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Noise Figure Turn On Time Turn Off Time Symbol BVCEO BVEBO ICES hFE Test Conditions IC= -2mA, IB=0 IE= -1µA, IC=0 VCB= -32V, VBE=0 VCE= -5V, IC= -10µA VCE= -5V, IC= -2mA VCE= -5V, IC= -50mA VCE (sat) VBE (sat) VBE (on) COB NF tON tOFF IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA VCB= -10V, IE=0 f=1MHz IC= -0.2mA, VCE= -5V RG=20KΩ, f=1KHz IC= -10mA, IB1= -1mA VBB= -3.6V, IB2= -1mA R1=R2=50KΩ, RL=990Ω Min -32 -5 20 40 100 120 140 250 380 60 80 100 100 0.68 0.6 0.6 Max -20 220 310 460 630 -0.55 -0.25 1.05 0.85 0.75 6 6 150 800 Unit V V nA V V V V V pF dB ns ns ©1999 Fairchild Semiconductor Corporation Rev. B 1 page

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