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PDF BCV62 Data sheet ( Hoja de datos )
| Número de pieza | BCV62 | |
| Descripción | PNP general purpose double transistor | |
| Fabricantes | NXP Semiconductors | |
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BCV62
PNP general-purpose double transistors
Rev. 4 — 26 July 2010
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
BCV62
BCV62A
BCV62B
BCV62C
Package
NXP
SOT143B
JEITA
-
NPN complement
BCV61
BCV61A
BCV61B
BCV61C
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
Applications with working point independent of temperature
Current mirrors
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
VCEO
collector-emitter voltage
IC collector current
Transistor TR1
open base
- - −30 V
- - −100 mA
hFE DC current gain
VCE = −5 V; IC = −100 μA 100 -
VCE = −5 V; IC = −2 mA
100 -
-
800
1 page  
NXP Semiconductors
BCV62
PNP general-purpose double transistors
500
hFE
400
300
200
100
mgt711
−1200
VBE
(mV)
−1000
(1) −800
−600
(2)
−400
(3)
−200
mgt712
(1)
(2)
(3)
0
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. BCV62A: DC current gain as a function of
collector current; typical values
−104
VCEsat
(mV)
mgt713
−103
0
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 2. BCV62A: Base-emitter voltage as a function of
collector current; typical values
−1200
VBEsat
(mV)
−1000
−800
−600
mgt714
(1)
(2)
(3)
−102
(1)
(3) (2)
−400
−200
−10
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
BCV62A: Collector-emitter saturation voltage
as a function of collector current; typical
values
0
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. BCV62A: Base-emitter saturation voltage as a
function of collector current; typical values
BCV62
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BCV62
PNP general-purpose double transistors
12. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BCV62 v.4
Modifications:
20100726
Product data sheet
-
BCV62_3
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1 “Product profile”: amended
• Section 3 “Ordering information”: added
• Section 4 “Marking”: updated
• Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added
• Section 8 “Test information”: added
• Figure 16: superseded by minimized package outline drawing
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
BCV62_3
19990408
Product specification
-
BCV62_CNV_2
BCV62_CNV_2
19970618
Product specification
-
-
BCV62
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
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