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PDF BCV61A Data sheet ( Hoja de datos )
| Número de pieza | BCV61A | |
| Descripción | NPN Silicon Double Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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NPN Silicon Double Transistor
To be used as a current mirror
Good thermal coupling and VBE matching
High current gain
Low collector-emitter saturation voltage
C1 (2)
Tr.1
4
C2 (1)
Tr.2
BCV61
3
2
1 VPS05178
Type
BCV61A
BCV61B
BCV61C
Marking
1Js
1Ks
1Ls
E1 (3)
E2 (4)
EHA00012
Pin Configuration
1 = C2 2 = C1 3 = E1 4 = E2
1 = C2 2 = C1 3 = E1 4 = E2
1 = C2 2 = C1 3 = E1 4 = E2
Package
SOT143
SOT143
SOT143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current
Base peak current (transistor T1)
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
Value
30
30
6
100
200
200
300
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
170
Unit
V
mA
mW
°C
K/W
1 Jul-10-2001
1 page  
BCV61
Total power dissipation Ptot = f(TS)
Permissible pulse load
Ptotmax / PtotDC = f (tp)
350
mW
250
200
150
100
50
00 15 30 45 60 75 90 105 120 °C 150
TS
10 3 BCV 61
Ptot max
Ptot DC
5
10 2
5
10 1
5
EHP00942
D = tp
T
tp
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 0
10 -6 10 -5
10 -4 10 -3 10 -2
s
tp
10 0
5 Jul-10-2001
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCV61A.PDF ] | |
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