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Infineon Technologies AG - NPN Silicon Double Transistor

Numéro de référence BCV61
Description NPN Silicon Double Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BCV61 fiche technique
NPN Silicon Double Transistor
To be used as a current mirror
Good thermal coupling and VBE matching
High current gain
Low collector-emitter saturation voltage
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCV61
3
4
2
1
C1 (2)
C2 (1)
Tr.1 Tr.2
Type
BCV61B
BCV61C
Marking
1Ks
1Ls
E1 (3)
E2 (4)
EHA00012
1 = C2
1 = C2
Pin Configuration
2 = C1 3 = E1 4 = E2
2 = C1 3 = E1 4 = E2
Package
SOT143
SOT143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Symbol
VCEO
Value
30
Collector-base voltage (open emitter)
(transistor T1)
VCBO
30
Emitter-base voltage
DC collector current
Peak collector current, tp < 10 ms
Base peak current (transistor T1)
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
6
100
200
200
300
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
170
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
K/W
1 2011-10-13

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