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Infineon Technologies AG - NPN Silicon Darlington Transistors

Numéro de référence BCV29
Description NPN Silicon Darlington Transistors
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BCV29 fiche technique
NPN Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCV28, BCV48 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCV29, BCV49
1
2
3
2
Type
BCV29
BCV49
Marking
EF
EG
Maximum Ratings
Parameter
Collector-emitter voltage
BCV29
BCV49
Collector-base voltage
BCV29
BCV49
Emitter-base voltage
Collector current
Peak collector current, tp 10 ms
Base current
Peak base current
Total power dissipation-
TS 130 °C
Junction temperature
Storage temperature
Pin Configuration
1=B 2=C 3=E
1=B 2=C 3=E
Package
SOT89
SOT89
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
30
60
40
80
10
500
800
100
200
1
150
-65 ... 150
Unit
V
mA
W
°C
1 2011-10-05

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