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Numéro de référence | BCU83-SMD | ||
Description | NPN EPITAXIAL PLANAR SILICON TRANSISTOR | ||
Fabricant | Seme LAB | ||
Logo | |||
BCU83–SMD
MECHANICAL DATA
Dimensions in mm
4 .5
1 .6
1 .5
0 .4 0
0 .5 0
1 .5
3 .0
0 .4 0
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
Ideal for high current driver applications
requiring low loss devices
FEATURES
• LOW VCE(SAT)
• HIGH CURRENT
• HIGH ENERGY RATING
-+*
SOT89
APPLICATIONS
• ANY HIGH CURRENT DRIVER
APPLICATIONS REQUIRING
EFFICIENT LOW LOSS DEVICES
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO Collector – Emitter voltage
20V
VCBO Collector – Base voltage
60V
VEBO Emitter – Base voltage
6V
IC Collector current
5A
IC(PK) Peak Collector current
8A
Ptot Total Dissipation at Tcase = 25°C
0.9W
Tstg Storage Temperature
–55 to 150°C
Tj Maximum Operating Junction Temperature
150°C
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
Prelim. 1/94
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Pages | Pages 2 | ||
Télécharger | [ BCU83-SMD ] |
No | Description détaillée | Fabricant |
BCU83-SMD | NPN EPITAXIAL PLANAR SILICON TRANSISTOR | Seme LAB |
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