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Mitsubishi Electric Semiconductor - MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE

Numéro de référence BCR5AS
Description MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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BCR5AS fiche technique
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5AS
OUTLINE DRAWING
Dimensions
in mm
TYPE
NAME
6.5
5.0±0.2
4
VOLTAGE
CLASS
0.5±0.1
• IT (RMS) ........................................................................ 5A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ........................................... 30mA
0.9 MAX
1.0
2.3 2.3
0.5±0.2
0.8
Measurement point of
case temperature
123
24
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1 4 T2 TERMINAL
MP-3
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
5
50
10.4
3
0.3
10
2
–40 ~ +125
–40 ~ +125
0.26
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999

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