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BCR555 fiches techniques PDF

Siemens Semiconductor Group - PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)

Numéro de référence BCR555
Description PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BCR555 fiche technique
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in resistor (R1 = 2.2k, R2 = 10k)
BCR 555
Type
BCR 555
Marking Ordering Code Pin Configuration
XDs Q62702-C2383 1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
5
12
500
330
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
325
215
K/W
Semiconductor Group
1
Nov-27-1996

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