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Infineon Technologies AG - NPN Silicon Digital Transistor

Numéro de référence BCR512
Description NPN Silicon Digital Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BCR512 fiche technique
BCR512
NPN Silicon Digital Transistor
 Switching circuit, inverter, interface circuit,
driver circuit
 Built in bias resistor (R1=4.7k, R2=4.7k)
3
C
3
R1
R2
2
1 VPS05161
Type
BCR512
Marking
XFs
1
B
1=B
2
E
EHA07184
Pin Configuration
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Value
50
50
10
30
500
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
 215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Dec-13-2001

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