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Numéro de référence | BCR512 | ||
Description | NPN Silicon Digital Transistor | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
BCR512
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1=4.7k, R2=4.7k)
3
C
3
R1
R2
2
1 VPS05161
Type
BCR512
Marking
XFs
1
B
1=B
2
E
EHA07184
Pin Configuration
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Value
50
50
10
30
500
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Dec-13-2001
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Pages | Pages 4 | ||
Télécharger | [ BCR512 ] |
No | Description détaillée | Fabricant |
BCR512 | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ drive circuit) | Siemens Semiconductor Group |
BCR512 | NPN Silicon Digital Transistor | Infineon Technologies AG |
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