|
|
PDF BCR3PM Data sheet ( Hoja de datos )
| Número de pieza | BCR3PM | |
| Descripción | LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BCR3PM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
BCR3PM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
• IT (RMS) ........................................................................ 3A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (10mA) V5
• Viso ........................................................................ 1500V
• UL Recognized: File No. E80276
APPLICATION
Contactless AC switches, light dimmer, electric blankets,
control of household equipment such as electric fan,
solenoid drivers, small motor control,
other general purpose control applications
2.54 2.54
0.5 2.6
123
2
∗ Measurement point of
case temperature
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
TO-220F
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=107°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
3.0
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Feb.1999
1 page  
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140 Tj = 125°C
120
100
80
60
40 III QUADRANT
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
102 VOLTAGE WAVEFORM
7t
5
4
(dv/dt)C
VD
3
2
CURRENT WAVEFORM
IT (di/dt)C
τt
101
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
7
5
4
3
MINIMUM
2 CHARAC-
TERISTICS
100 VALUE
100 2 3 4 5 7 101
I QUADRANT
III QUADRANT
2 3 4 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7 TYPICAL EXAMPLE
5 IRGT III
4
3 IRGT I
2 IFGT I
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V A
V RG
TEST PROCEDURE 3
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCR3PM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BCR3PM | LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor |
| BCR3PM-12L | Triac Low Power Use |  Renesas Technology |
| BCR3PM-12LG | Triac Medium Power Use | Renesas Technology |
| BCR3PM-14L | Triac Low Power Use | Renesas Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |