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Mitsubishi Electric Semiconductor - MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE

Numéro de référence BCR30
Description MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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BCR30 fiche technique
MITSUBISHI SEMICONDUCTOR TRIAC
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR30AM
OUTLINE DRAWING
15.9 MAX
4
Dimensions
in mm
4.5±0.3
1.5±0.2
• IT (RMS) ...................................................................... 30A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ........................................... 50mA
TYPE
NAME
VOLTAGE
CLASS
2±0.3
1.0±0.2
123
5.45 5.45
0.6±0.2
2.8±0.3
Measurement point of
case temperature
4
24
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1 4 T2 TERMINAL
TO-3P
APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=75°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
30
300
378
5
0.5
10
2
–40 ~ +125
–40 ~ +125
4.8
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999

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