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BCR2PM fiches techniques PDF

Mitsubishi Electric Semiconductor - LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE

Numéro de référence BCR2PM
Description LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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BCR2PM fiche technique
BCR2PM
MITSUBISHI SEMICONDUCTOR TRIAC
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2 ± 0.2
1.3 MAX
0.8
2.54 2.54
0.5 2.6
¡IT (RMS) ........................................................................ 2A
¡VDRM ..............................................................400V/600V
¡IRGT !, IRGT # ....................................................... 10mA
ŒŽ

ΠT1 TERMINAL
 T2 TERMINAL
Œ Ž Ž GATE TERMINAL
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
2
10
0.41
1
0.1
6
1
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999

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