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BCR20E fiches techniques PDF

Mitsubishi Electric Semiconductor - MEDIUM POWER USE A/ B/ C : NON-INSULATED TYPE/ E : INSULATED TYPE/ GLASS PASSIVATION TYPE

Numéro de référence BCR20E
Description MEDIUM POWER USE A/ B/ C : NON-INSULATED TYPE/ E : INSULATED TYPE/ GLASS PASSIVATION TYPE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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BCR20E fiche technique
MITSUBISHI SEMICONDUCTOR TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR20A, BCR20B, BCR20C, BCR20E
OUTLINE DRAWING
Dimensions
in mm
φ2.0 MIN
3
1
1
3
2
φ8.7 MAX
• IT (RMS) ...................................................................... 20A
• VDRM ..............................................................400V/500V
• IFGT !, IRGT !, IRGT # ........................................... 30mA
φ11 MAX
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
BCR20A
APPLICATION
Contactless AC switches, light dimmer,
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,
solid state relay
2
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 500
600 700
Unit
V
V
Symbol
Parameter
IT (RMS)
RMS on-state current
ITSM
I2t
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
V1. Gate open.
Conditions
Commercial frequency, sine full
wave, 360° conduction
BCR20A, B, C
BCR20E
Tc=98°C
Tb=64°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
20
220
203
5.0
0.5
10
2.0
–20 ~ +125
–20 ~ +125
Unit
A
A
A2s
W
W
V
A
°C
°C
Feb.1999

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