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PDF BCR20AM Data sheet ( Hoja de datos )
| Número de pieza | BCR20AM | |
| Descripción | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCR20AM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR20AM
OUTLINE DRAWING
Dimensions in mm
10.5 MAX.
4.5
1.3
TYPE
NAME
VOLTAGE
CLASS
2.5
φ 3.6 ± 0.2
1.0
0.8
2.5
E
0.5 2.6
q IT (RMS) ................................................................ 20A
q VDRM ...................................................... 400V / 600V
q IFGT !, IRGT ! , IRGT # ................... 30mA (20mA) V5
V Measurement point of
case temperature
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
TO-220
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltageV1
Non-repetitive peak off-state voltageV1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t I2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave, Tc=105°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
20
200
167
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999
1 page  
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140 Tj = 125°C
120 III QUADRANT
100
80
60 I QUADRANT
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5
4
3
2
102
7
5
4
3
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
GATE TRIGGER PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
102
7 MINIMUM
5 CHARAC-
III QUADRANT
3 TERISTICS
2 VALUE
101
7
5
3
2
TYPICAL
EXAMPLE
100 Tj = 125°C
7
5
IT = 4A
3 τ = 500µs
2 VD = 200V
f = 3Hz
10–1100 2 3 5 7 101
I QUADRANT
2 3 5 7 102 2 3
5 7 103
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A 6V A
330Ω
330Ω
VV
TEST PROCEDURE
6Ω
TEST PROCEDURE
6V A
330Ω
V
TEST PROCEDURE
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCR20AM.PDF ] | |
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