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PDF BCR1AM-8 Data sheet ( Hoja de datos )
| Número de pieza | BCR1AM-8 | |
| Descripción | LOW POWER USE PLANAR PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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Hay una vista previa y un enlace de descarga de BCR1AM-8 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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BCR1AM-8
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
• IT (RMS) ..................................................................... 1.0A
• VDRM ....................................................................... 400V
• IFGT ! ....................................................................... 5mA
• IRGT !, IRGT # .......................................... 5mA (3mA) V5
• IFGT # ..................................................................... 10mA
2
3
1
VOLTAGE
CLASS
TYPE
NAME
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
132
JEDEC : TO-92
APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines,
trigger circuit for low and medium triac, solid state relay,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8
400
500
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=56°C V4
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
Ratings
1.0
10
0.41
1
0.1
6
1
–40 ~ +125
–40 ~ +125
0.23
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999
1 page  
COMMUTATION CHARACTERISTICS
101
7 TYPICAL EXAMPLE
5
4
3
TC = 125°C
IT = 1A
τ = 500µs
VD = 200V
2
MINIMUM III QUADRANT
100 CHARAC-
TERISTICS
7 VALUE
5
4
3 I QUADRANT
2
10–110–1 2 3 4 5 7 100 2 3 4 5 7 101
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 3 TEST PROCEDURE 4
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7 TYPICAL EXAMPLE
5
4
3
2
102
7 IFGT I
5 IRGT III
4
3
IRGT I
IFGT III
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCR1AM-8.PDF ] | |
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