|
|
Numéro de référence | BCR199L3 | ||
Description | PNP Silicon Digital Transistor | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 47kΩ)
BCR199...
BCR199F/L3
BCR199T
C
3
R1
12
BE
EHA07180
Type
BCR199F*
BCR199L3*
BCR199T*
* Preliminary
Marking
UBs 1=B
UB 1=B
UBs 1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR199F, TS ≤ 128°C
BCR199L3, TS ≤ 135°C
BCR199T, TS ≤ 109°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
1
Package
- TSFP-3
- TSLP-3-4
- SC75
Value
50
50
5
50
70
250
250
250
150
-65 ... 150
Unit
V
mA
mW
°C
Aug-29-2003
|
|||
Pages | Pages 6 | ||
Télécharger | [ BCR199L3 ] |
No | Description détaillée | Fabricant |
BCR199L3 | PNP Silicon Digital Transistor | Infineon Technologies AG |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |