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Mitsubishi Electric Semiconductor - MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE

Numéro de référence BCR16UM
Description MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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BCR16UM fiche technique
BCR16UM
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
10.2 4.5
1.27
TYPE
NAME
VOLTAGE
CLASS
V φ3.8 ± 0.2
1.4
0.8
2.54
2.54 0.6
2.6 ± 0.4
¡IT (RMS) ...................................................................... 16A
¡VDRM ..............................................................400V/600V
¡IFGT !, IRGT !, IRGT # ........................................... 15mA
¡Viso........................................................................ 1500V
APPLICATION
Light dimmer
Œ  Ž V Measurement point of
case temperature

ΠT1 TERMINAL
 T2 TERMINAL
Ž Ž GATE TERMINAL
Œ
TO-220
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=79°C V3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
16
170
121
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.3
1500
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Feb.1999

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