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Numéro de référence | BCR166W | ||
Description | PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) | ||
Fabricant | Siemens Semiconductor Group | ||
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1 Page
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=4.7kΩ, R2=47kΩ)
BCR 166W
Type
BCR 166W
Marking Ordering Code Pin Configuration
WTs
UPON INQUIRY 1=B
2=E
3=C
Package
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 124°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
5
15
100
250
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
≤ 240
≤ 105
K/W
Semiconductor Group
1
Nov-26-1996
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Pages | Pages 4 | ||
Télécharger | [ BCR166W ] |
No | Description détaillée | Fabricant |
BCR166 | PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) | Siemens Semiconductor Group |
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