DataSheetWiki


BCR166W fiches techniques PDF

Siemens Semiconductor Group - PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)

Numéro de référence BCR166W
Description PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





1 Page

No Preview Available !





BCR166W fiche technique
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=4.7k, R2=47k)
BCR 166W
Type
BCR 166W
Marking Ordering Code Pin Configuration
WTs
UPON INQUIRY 1=B
2=E
3=C
Package
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 124°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
5
15
100
250
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
240
105
K/W
Semiconductor Group
1
Nov-26-1996

PagesPages 4
Télécharger [ BCR166W ]


Fiche technique recommandé

No Description détaillée Fabricant
BCR166 PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) Siemens Semiconductor Group
Siemens Semiconductor Group
BCR166 PNP Silicon Digital Transistor Infineon Technologies AG
Infineon Technologies AG
BCR166F PNP Silicon Digital Transistor Infineon Technologies AG
Infineon Technologies AG
BCR166L3 PNP Silicon Digital Transistor Infineon Technologies AG
Infineon Technologies AG

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche