BCR12CS Datasheet PDF - Powerex Power Semiconductors
| Part Number | BCR12CS | |
| Description | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE | |
| Manufacturers | Powerex Power Semiconductors | |
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BCR12CS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
4 10.5 MAX
TYPE
NAME
∗
VOLTAGE
CLASS
1
5
0.8
Dimensions
in mm
4.5
1.3
0
+0.3
–0
0.5
• IT (RMS) ...................................................................... 12A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5
APPLICATION
Solid state relay, hybrid IC
123
∗ Measurement
point of case
24
temperature
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1 4 T2 TERMINAL
TO-220S
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=98°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
12
120
60
5
0.5
10
2
–40 ~ +125
–40 ~ +125
1.2
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999
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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140 Tj = 125°C
120
100 # 2
80 III QUADRANT
60
40 # 1
20 I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
3 TYPICAL
2 EXAMPLE
102 Tj = 125°C
7 IT = 4A
5 τ = 500µs
3 VD = 200V
2 f = 3Hz
VOLTAGE WAVEFORM
t
(dv/dt)C VD
CURRENT WAVEFORM
IT (di/dt)C
τt
101
7
I QUADRANT
5
3 MINIMUM
2 CHARAC-
100 TERISTICS
7 VALUE
5
III QUADRANT
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5 IFGT I
4
3
IRGT I
IRGT III
2
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V A
V RG
TEST PROCEDURE 3
Feb.1999
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BCR12CS electronic component. |
| Information | Total 5 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BCR12CS.PDF Datasheet ] | |
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