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Infineon Technologies AG - NPN Silicon Digital Transistor Array

Numéro de référence BCR119S
Description NPN Silicon Digital Transistor Array
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BCR119S fiche technique
BCR119S
NPN Silicon Digital Transistor Array
 Switching circuit, inverter, interface circuit,
driver circuit
 Two ( galvanic) internal isolated Transistors
with good matching in one package
 Built in bias resistor (R1=4.7k)
C1 B2 E2
654
R1
TR1
R1
TR2
4
5
6
3
2
1
VPS05604
Type
BCR119S
Marking
WKs
123
E1 B1 C2
EHA07265
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
RthJS
Value
50
50
5
15
100
250
150
-65 ... 150
 140
Unit
V
mA
mW
°C
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Nov-29-2001

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