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Infineon Technologies AG - NPN/PNP Silicon Digital Transistor Array

Numéro de référence BCR10PN
Description NPN/PNP Silicon Digital Transistor Array
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BCR10PN fiche technique
BCR10PN
NPN/PNP Silicon Digital Transistor Array
 Switching circuit, inverter, interface circuit,
driver circuit
 Two (galvanic) internal isolated NPN/PNP
Transistors in one package
 Built in bias resistor (R1=10k, R2 =10k)
4
5
6
Tape loading orientation
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07193
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07176
3
2
1
VPS05604
Type
BCR10PN
Marking
W1s
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Value
50
50
10
20
100
250
150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
 140
K/W
1 Nov-29-2001

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