|
|
Numéro de référence | BCR10PN | ||
Description | NPN/PNP Silicon Digital Transistor Array | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
BCR10PN
NPN/PNP Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor (R1=10k, R2 =10k)
4
5
6
Tape loading orientation
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07193
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07176
3
2
1
VPS05604
Type
BCR10PN
Marking
W1s
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Value
50
50
10
20
100
250
150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
140
K/W
1 Nov-29-2001
|
|||
Pages | Pages 5 | ||
Télécharger | [ BCR10PN ] |
No | Description détaillée | Fabricant |
BCR10PM | TRIAC | Mitsubishi Electric Semiconductor |
BCR10PM | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
BCR10PM-12 | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
BCR10PM-12L | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |