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Motorola Inc - MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

Numéro de référence BCP69T1
Description MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
Fabricant Motorola Inc 
Logo Motorola  Inc 





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BCP69T1 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCP69T1/D
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current
applications. The device is housed in the SOT-223 package, which is designed for
medium power surface mount applications.
High Current: IC = –1.0 Amp
The SOT-223 Package can be soldered using wave or reflow.
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die.
Available in 12 mm Tape and Reel
Use BCP69T1 to order the 7 inch/1000 unit reel.
Use BCP69T3 to order the 13 inch/4000 unit reel.
COLLECTOR 2,4
NPN Complement is BCP68
BASE
1
EMITTER 3
BCP69T1
Motorola Preferred Device
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
– 25
– 20
– 5.0
–1.0
1.5
12
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Operating and Storage Temperature Range
DEVICE MARKING
TJ, Tstg
– 65 to 150
°C
CE
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction-to-Ambient (surface mounted)
Lead Temperature for Soldering, 0.0625from case
Time in Solder Bath
Symbol
RθJA
TL
Max
83.3
260
10
Unit
°C/W
°C
Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoottoorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1

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