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Infineon Technologies AG - PNP Silicon AF Transistor

Numéro de référence BCP69
Description PNP Silicon AF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BCP69 fiche technique
PNP Silicon AF Transistor
 For general AF applications
 High collector current
 High current gain
 Low collector-emitter saturation voltage
 Complementary type: BCP68 (NPN)
BCP69
4
3
2
1 VPS05163
Type
BCP69
BCP69-10
BCP69-16
BCP69-25
Marking
BCP 69 1 = B
BCP 69-10 1 = B
BCP 69-16 1 = B
BCP 69-25 1 = B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 124 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Values
20
25
25
5
1
2
100
200
1.5
150
-65 ... 150
17
Unit
V
V
V
A
mA
W
°C
K/W
1 Nov-29-2001

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