DataSheetWiki


BCP56T1 fiches techniques PDF

Motorola Inc - MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

Numéro de référence BCP56T1
Description MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
Fabricant Motorola Inc 
Logo Motorola  Inc 





1 Page

No Preview Available !





BCP56T1 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCP56T1/D
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier
applications. The device is housed in the SOT-223 package, which is designed for
medium power surface mount applications.
High Current: 1.0 Amp
The SOT-223 package can be soldered using wave or reflow. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel
Use BCP56T3 to order the 13 inch/4000 unit reel
COLLECTOR 2,4
PNP Complement is BCP53T1
BASE
1
EMITTER 3
BCP56T1
SERIES
Motorola Preferred Device
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
80 Vdc
100 Vdc
5 Vdc
1 Adc
1.5 Watts
12 mW/°C
Operating and Storage Temperature Range
DEVICE MARKING
TJ, Tstg
– 65 to 150
°C
BCP56T1 = BH
BCP56-10T1 = BK
BCP56-16T1 = BL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction-to-Ambient (surface mounted)
RθJA 83.3 °C/W
Maximum Temperature for Soldering Purposes
Time in Solder Bath
TL 260 °C
10 Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoottoorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1

PagesPages 6
Télécharger [ BCP56T1 ]


Fiche technique recommandé

No Description détaillée Fabricant
BCP56T1 MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT Motorola  Inc
Motorola Inc
BCP56T1G NPN Silicon Epitaxial Transistor ON Semiconductor
ON Semiconductor
BCP56T3G NPN Silicon Epitaxial Transistor ON Semiconductor
ON Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche